Friday, October 19, 2007

[The Chosun Ilbo, October 18 2007] New Discovery Could Pave Way for Korean FeRAM

Thanks to a discovery by a Korean researcher, the nation may soon be able to build ferroelectric RAM, or FeRAM.

According to POSTECH on Wednesday, Dr. Shin Young-han succeeded in figuring out the operational mechanism of ferroelectrics and published the research in the science journal Nature.

In ferroelectrics, a material is given a permanent electric polarization by the application of an electric field.

FeRAM is considered "the dream semiconductor" because it has all the merits of DRAM (can store large volumes of data), SRAM (can process data at high speed) and Flash memory (holds data when the power is turned off).

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